SOT89 NPN SILICON PLANAR

MEDIUM POWER TRANSISTORS

ISSUE 3 – FEBRUARY 1996

7

COMPLEMENTARY TYPES

–

BSR43 - BSR33

BSR41 - BSR31

PARTMARKING DETAIL

–

BSR43 - AR4

BSR41 - AR2

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

BSR41

BSR43

UNIT

Collector-Base Voltage

VCBO

70

90

V

Collector-Emitter Voltage

VCEO

60

80

V

Emitter-Base Voltage

VEBO

5V

Peak Pulse Current

ICM

2A

Continuous Collector Current

IC

1A

Base Current

IB

100

mA

Power Dissipation at Tamb=25°C

PTOT

1W

Operating and Storage Temperature Range

Tj:Tstg

-65 to +150

°C

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).

PARAMETER

SYMBOL

MIN.

MAX.

UNIT

CONDITIONS.

Collector-Base

BSR43

Breakdown Voltage BSR41

V(BR)CBO

90

70

V

IC=100µA

Collector-Emitter

BSR43

Breakdown Voltage BSR41

V(BR)CEO

80

60

VIC=10mA *

Emitter-Base Breakdown Voltage

V(BR)EBO

5V

IE=10µA

Collector Cut-Off Current

ICBO

100

50

nA

µA

VCB=60V

VCB=60V, Tamb =125°C

Collector-Emitter

Saturation Voltage

VCE(sat)

0.25

0.5

V

V

IC =150mA, IB =15mA

IC =500mA, IB =50mA

Base-Emitter

Saturation Voltage

VBE(sat)

1.0

1.2

V

V

IC =150mA, IB =15mA

IC =500mA, IB =50mA

Static Forward

Current Transfer Ratio

hFE

30

100

50

300

IC =100µA, VCE =5V

IC =100mA, VCE =5V

IC =500mA, VCE =5V

Collector Capacitance

Cc

12

pF

VCB =10V, f=1MHz

Emitter Capacitance

Ce

90

pF

VEB =0.5V, f=1MHz

Transition Frequency

fT

100

MHz

IC=50mA, VCE=10V

f =35MHz

Turn-On Time

Ton

250

ns

VCC=20V, IC =100mA

IB1 =IB2 =5mA

Turn-Off Time

Toff

1000

ns

*Measured under pulsed conditions. Pulse width=300

µs. Duty cycle ≤2%

For typical characteristics graphs see FMMT493 datasheet.

BSR41

BSR43

C

C

B

E

SOT89

3 - 68

Not Recommended for New Design

Please Use FMMT491