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CEC3115 Datasheet(PDF) 1 Page - CET-MOS Technology Corp. |
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CEC3115 Datasheet(HTML) 1 Page - CET-MOS Technology Corp. |
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1 / 5 page  P-Channel Enhancement Mode Field Effect Transistor CEC3115 FEATURES -30V, -36A, RDS(ON) = 12mW @VGS = -10V. RDS(ON) = 16mW @VGS = -4.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. 1 RoHS compliant. http://www.cet-mos.com Rev 1. 2021.May S G D D G S DFN3*3 S S D D D Details are subject to change without notice . ABSOLUTE MAXIMUM RATINGS TC = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage Gate-Source Voltage VDS VGS -30 ±20 V V Thermal Characteristics Thermal Resistance, Junction-to-Case b Parameter Symbol Limit Units C/W 5 RqJc Thermal Resistance, Junction-to-Ambient b C/W 50 RqJA Maximum Power Dissipation PD 25 W Operating and Store Temperature Range TJ,Tstg -55 to 150 C -44 -11 A A -36 A -144 A Drain Current-Continuous ID@RqJc IDM@RqJA ID@RqJA Drain Current-Pulsed a IDM@RqJc |
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