CEC3133 datasheet(1/5 Pages) CET-MOS

Part #	CEC3133

Description	P-Channel Enhancement Mode Field Effect Transistor

PDF	5 Pages

Scroll/Zoom	100%

Manufacturer	CET-MOS [CET-MOS Technology Corp.]

Direct Link	https://www.cet-mos.com/en/index.asp

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P-Channel Enhancement Mode Field Effect Transistor

CEC3133

FEATURES

-30V, -30A, RDS(ON) = 17mW @VGS = -10V.

RDS(ON) = 26mW @VGS = -4.5V.

Super High dense cell design for extremely low RDS(ON).

High power and current handing capability.

1

RoHS compliant.

http://www.cet-mos.com

Rev 1. 2018.Apr

S

G

D

Details are subject to change without notice .

D

G

S

DFN3*3

S

D

ABSOLUTE MAXIMUM RATINGS TC = 25 C unless otherwise noted

Parameter

Symbol

Rating

Units

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

Maximum Power Dissipation

VDS

VGS

ID

PD

IDM

-30

2.5

-40

-30

V

W

A

-19

A

Drain Current-Pulsed a

-120

A

Operating and Store Temperature Range

TJ,Tstg

-55 to 150

C

Thermal Characteristics

Thermal Resistance, Junction-to-Case b

Parameter

Symbol

Limit

Units

C/W

5

RqJc

Thermal Resistance, Junction-to-Ambient b

C/W

50

RqJA

TC = 25 C

TC = 100 C

TC = 25 C

TA = 25 C

-10

A

-6

A

TA = 25 C

TA = 100 C

TC = 25 C

TA = 25 C

25

W

V

±25

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CEC3133 Datasheet(PDF) 1 Page - CET-MOS Technology Corp.

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