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CEC6P91 Datasheet(PDF) 1 Page - CET-MOS Technology Corp. |
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CEC6P91 Datasheet(HTML) 1 Page - CET-MOS Technology Corp. |
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1 / 5 page  CEC6P91 FEATURES -60V, -12.5A, RDS(ON) = 100mW @VGS = -10V. RDS(ON) = 120mW @VGS = -4.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. ABSOLUTE MAXIMUM RATINGS TC = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Maximum Power Dissipation VDS VGS ID@RqJc PD IDM@RqJA -60 25 -16 -12.5 ±20 V W A A V 1 RoHS compliant. http://www.cet-mos.com Rev 1. 2022.Sep ID@RqJA - 4 A Drain Current-Pulsed a IDM@RqJc -50 A P-Channel Enhancement Mode Field Effect Transistor Details are subject to change without notice . S G D D G S DFN3*3 S S D D D Operating and Store Temperature Range TJ,Tstg -55 to 150 C Thermal Characteristics Thermal Resistance, Junction-to-Case Parameter Symbol Limit Units C/W RqJc Thermal Resistance, Junction-to-Ambient b C/W 50 RqJA 5 |
Similar Part No. - CEC6P91 |
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Similar Description - CEC6P91 |
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