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PDTC123ES Datasheet(PDF) 5 Page - Nexperia B.V. All rights reserved

Part # PDTC123ES
Description  PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ
PDF  15 Pages
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Manufacturer  NEXPERIA [Nexperia B.V. All rights reserved]
Direct Link  https://www.nexperia.com/
Logo NEXPERIA - Nexperia B.V. All rights reserved

PDTC123ES Datasheet(HTML) 5 Page - Nexperia B.V. All rights reserved

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2004 Aug 02
4
NXP Semiconductors
Product data sheet
PNP resistor-equipped transistors;
R1 = 2.2 k
Ω, R2 = 2.2 kΩ
PDTA123E series
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1.
Refer to standard mounting conditions.
2.
Reflow soldering is the only recommended soldering method.
3.
Refer to SOT883 standard mounting conditions; FR4 with 60
μm copper strip line.
TYPE NUMBER
PACKAGE
NAME
DESCRIPTION
VERSION
PDTA123EE
−
plastic surface mounted package; 3 leads
SOT416
PDTA123EEF
−
plastic surface mounted package; 3 leads
SOT490
PDTA123EK
−
plastic surface mounted package; 3 leads
SOT346
PDTA123EM
−
leadless ultra small plastic package; 3 solder lands; body
1.0 x 0.6 x 0.5 mm
SOT883
PDTA123ES
−
plastic single-ended leaded (through hole) package; 3 leads
SOT54
PDTA123ET
−
plastic surface mounted package; 3 leads
SOT23
PDTA123EU
−
plastic surface mounted package; 3 leads
SOT323
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
−50
V
VCEO
collector-emitter voltage
open base
−
−50
V
VEBO
emitter-base voltage
open collector
−
−10
V
VI
input voltage
positive
−
+10
V
negative
−
−12
V
IO
output current (DC)
−
−100
mA
ICM
peak collector current
−
−100
mA
Ptot
total power dissipation
Tamb ≤ 25 °C
SOT54
note 1
−
500
mW
SOT23
note 1
−
250
mW
SOT346
note 1
−
250
mW
SOT323
note 1
−
200
mW
SOT416
note 1
−
150
mW
SOT490
notes 1 and 2
−
250
mW
SOT883
notes 2 and 3
−
250
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C



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