BC161 datasheet(4/8 Pages) PHILIPS

4 / 8 page

1997 May 12

Philips Semiconductors

Product speciﬁcation

PNP medium power transistors

BC160; BC161

CHARACTERISTICS

Tamb =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB = −40 V

−−10

−100

IE = 0; VCB = −40 V; Tj = 150 °C

−−10

−100

µA

IEBO

emitter cut-off current

IC = 0; VEB = −5V

−−−100

hFE

DC current gain

IC = −100 µA; VCE = −1V

BC160-10; BC161-10

−

BC160-16; BC161-16

−

120

−

hFE

DC current gain

IC = −100 mA; VCE = −1V

BC160-10; BC161-10

100

160

BC160-16; BC161-16

100

160

250

hFE

DC current gain

IC = −1 A; VCE = −1V

BC160-10; BC161-10

−

BC160-16; BC161-16

−

VCEsat

collector-emitter saturation voltage

IC = −1 A; IB = −100 mA

−−0.6

−1V

VBE

base-emitter voltage

IC = −1 A; VCE = −1V

−−1

−1.7

collector capacitance

IE =ie = 0; VCB = −10 V; f = 1 MHz

−−

emitter capacitance

IC =ic = 0; VEB = −0.5 V; f = 1 MHz

−−

180

transition frequency

IC = −50 mA; VCE = −10 V;

f = 100 MHz

−−

MHz

Switching times (between 10% and 90% levels)

ton

turn-on time

ICon = −100 mA; IBon = −5 mA;

IBoff =5mA

−−

500

toff

turn-off time

−−

650

BC161 Datasheet(PDF) 4 Page - NXP Semiconductors

BC161 Datasheet(HTML) 4 Page - NXP Semiconductors

Html Pages

1 2 3 4 5 6 7 8

Datasheet Download

Link URL