BC177B datasheet(4/8 Pages) PHILIPS

4 / 8 page

1997 Jun 04

Philips Semiconductors

Product speciﬁcation

PNP general purpose transistor

BC177

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

Note

1. VBE decreases by about −2 mV/K with increasing temperature.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB = −20 V

−−1

−15

IE = 0; VCB = −20 V; Tj = 150 °C

−−−10

µA

IEBO

emitter cut-off current

IC = 0; VEB = −5V

−−

hFE

DC current gain

IC = −2 mA; VCE = −5 V

125

140

500

hFE

DC current gain

IC = −2 mA; VCE = −5V

BC177A

125

180

260

BC177B

240

290

500

VCEsat

collector-emitter saturation voltage IC = −10 mA; IB = −0.5 mA

−−75

−300 mV

IC = −100 mA; IB = −5mA

−−250 −

VBEsat

base-emitter saturation voltage

IC = −10 mA; IB = −0.5 mA

−−700 −

IC = −100 mA; IB = −5mA

−−850 −

VBE

base-emitter voltage

IC = −2 mA; VCE = −5 V; note 1

−600 −650 −750 mV

collector capacitance

IE =ie = 0; VCB = −10 V; f = 1 MHz

−

46pF

transition frequency

IC = −10 mA; VCE = −5 V; f = 100 MHz 100

−−

MHz

noise ﬁgure

IC = −200 µA; VCE = −5 V; RS =2kΩ;

f = 1 kHz; B = 200 Hz

−−

BC177B Datasheet(PDF) 4 Page - NXP Semiconductors

BC177B Datasheet(HTML) 4 Page - NXP Semiconductors

Html Pages

1 2 3 4 5 6 7 8

Datasheet Download

Link URL