BC237B datasheet(4/8 Pages) PHILIPS

4 / 8 page

1997 Sep 04

Philips Semiconductors

Product speciﬁcation

NPN general purpose transistors

BC237; BC237B

CHARACTERISTICS

Tamb =25 °C unless otherwise speciﬁed.

Note

1. Pulse test: tp ≤ 300 µs; δ≤ 0.02.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB =30V

−−

IE = 0; VCB = 30 V; Tj = 150 °C

−−

µA

IEBO

emitter cut-off current

IC = 0; VEB =5V

−−

100

hFE

DC current gain

IC = 0.1 mA; VCE = 5 V; see Fig.2

−

250

−

hFE

DC current gain

IC = 2 mA; VCE = 5 V; see Fig.2

BC237

120

−

460

BC237B

200

−

460

VCEsat

collector-emitter saturation voltage IC = 100 mA; IB = 5 mA; note 1

−−

600

VBEsat

base-emitter saturation voltage

IC = 100 mA; IB =5mA

−−

1200

VBE

base-emitter voltage

IC = 2 mA; VCE = 5 V

580

−

700

collector capacitance

IE =ie = 0; VCB = 10 V; f = 1 MHz

−

emitter capacitance

IC =ic = 0; VEB = 0.5 V; f = 1 MHz

−

1.5

−

transition frequency

IC = 10 mA; VCE = 5 V; f = 100 MHz

100

−−

MHz

noise ﬁgure

IC = 200 µA; VCE =5V; RS =2kΩ;

f = 1 kHz; B = 200 Hz

−−

Fig.2 DC current gain; typical values.

handbook, full pagewidth

300

100

200

MBH724

10−2

10−1

hFE

IC (mA)

103

102

VCE = 5 V

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