BC307B datasheet(4/8 Pages) PHILIPS

4 / 8 page

1997 Mar 07

Philips Semiconductors

Product speciﬁcation

PNP general purpose transistors

BC307; BC307B

CHARACTERISTICS

Tamb =25 °C unless otherwise speciﬁed.

Note

1. Pulse test: tp ≤ 300 µs; δ≤ 0.02.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB = −30 V;

−−15

IE = 0; VCB = −30 V; Tj = 150 °C

−−4

µA

IEBO

emitter cut-off current

IC = 0; VEB = −4V

−−15

hFE

DC current gain

IC = −2 mA; VCE = −5 V; see Fig.2

BC307

125

455

BC307B

222

455

VCEsat

collector-emitter saturation voltage IC = −100 mA; IB = −5 mA; note 1

−−600

VBEsat

base-emitter saturation voltage

IC = −100 mA; IB = −5 mA; note 1

−−1.1

VBE

base-emitter voltage

IC = −2 mA; VCE = −5 V; note 1

600

720

collector capacitance

IE =ie = 0; VCB = −10 V; f = 1 MHz

−

3pF

transition frequency

IC = −10 mA; VCE = −5 V; f = 100 MHz;

note 1

100

−

MHz

noise ﬁgure

IC = −200 µA; VCE = −5 V; RS =2kΩ;

f = 1 kHz; B = 200 Hz

−

Fig.2 DC current gain; typical values.

BC307B.

handbook, full pagewidth

300

200

100

400

MBH727

10−2

10−1

hFE

IC (mA)

103

102

VCE = 5 V

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