BC327 datasheet(3/8 Pages) PHILIPS

3 / 8 page

1999 Apr 15

Philips Semiconductors

Product speciﬁcation

PNP general purpose transistor

BC327

THERMAL CHARACTERISTICS

Note

1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

Note

1. VBE decreases by about −2 mV/K with increasing temperature.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

0.2

K/mW

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB = −20 V

−−−100 nA

IE = 0; VCB = −20 V; Tj = 150 °C

−−−5

µA

IEBO

emitter cut-off current

IC = 0; VEB = −5V

−−−100 nA

hFE

DC current gain

IC = −100 mA; VCE = −1V;

see Figs 2, 3 and 4

BC327

100

−

600

BC327-16

100

−

250

BC327-25

160

−

400

BC327-40

250

−

600

hFE

DC current gain

IC = −500 mA; VCE = −1V;

see Figs 2, 3 and 4

−−

VCEsat

collector-emitter saturation voltage

IC = −500 mA; IB = −50 mA

−−−700 mV

VBE

base-emitter voltage

IC = −500 mA; VCE = −1 V; note 1

−−−1.2

collector capacitance

IE =ie = 0; VCB = −10 V; f = 1 MHz

−

transition frequency

IC = −10 mA; VCE = −5V;

f = 100 MHz

−−

MHz

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