BC368 datasheet(3/8 Pages) PHILIPS

3 / 8 page

1999 Apr 26

Philips Semiconductors

Product speciﬁcation

NPN medium power transistor

BC368

THERMAL CHARACTERISTICS

Note

1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

150

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB =25V

−

100

IE = 0; VCB =25V; Tj = 150 °C

−

µA

IEBO

emitter cut-off current

IC = 0; VEB =5V

−

100

hFE

DC current gain

IC = 5 mA; VCE =10V

−

IC = 500 mA; VCE = 1 V; see Fig.2

375

IC = 1 A; VCE = 1 V; see Fig.2

−

VCEsat

collector-emitter saturation voltage

IC = 1 A; IB = 100 mA

−

500

VBE

base-emitter voltage

IC = 5 mA; VCE =10V

−

700

IC = 1 A; VCE =1V

−

transition frequency

IC = 10 mA; VCE = 5 V; f = 100 MHz

−

MHz

DC current gain ratio of the

complementary pairs

I

C = 500 mA; VCE =1V

−

1.6

FE1

FE2

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