BC369 datasheet(3/8 Pages) PHILIPS

3 / 8 page

1999 Apr 26

Philips Semiconductors

Product speciﬁcation

PNP medium power transistor

BC369

THERMAL CHARACTERISTICS

Note

1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

150

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB = −25 V

−−100

IE = 0; VCB = −25 V; Tj = 150 °C

−−10

µA

IEBO

emitter cut-off current

IC = 0; VEB = −5V

−−100

hFE

DC current gain

IC = −5 mA; VCE = −10 V

−

IC = −500 mA; VCE = −1 V; see Fig.2

375

IC = −1 A; VCE = −1 V; see Fig.2

−

DC current gain

IC = −500 mA; VCE = −1 V; see Fig.2

BC369-16

100

250

BC369-25

160

375

VCEsat

collector-emitter saturation voltage

IC = −1 A; IB = −100 mA

−−0.5

VBE

base-emitter voltage

IC = −5 mA; VCE = −10 V

−−0.7

IC = −1 A; VCE = −1V

−−1V

transition frequency

IC = −10 mA; VCE = −5 V; f = 100 MHz 40

−

MHz

DC current gain ratio of the

complementary pairs

I

C = 500 mA; VCE =1V

−

1.6

FE1

FE2

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