2004 Nov 05

3

Philips Semiconductors

Product specification

NPN Darlington transistor

BC618

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

Note

1. Transistor mounted on an FR4 printed-circuit board.

THERMAL CHARACTERISTICS

Note

1. Transistor mounted on an FR4 printed-circuit board.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-base voltage

open emitter

−

80

V

collector-emitter voltage

−

55

V

emitter-base voltage

open collector

−

12

V

collector current (DC)

−

500

mA

peak collector current

−

800

mA

base current (DC)

−

200

mA

total power dissipation

−

625

mW

storage temperature

−65

+150

°C

junction temperature

−

150

°C

ambient temperature

−65

+150

°C

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

thermal resistance from junction to ambient

note 1

200

K/W