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SG-710SCW Datasheet(PDF) 2 Page - Epson Company

Part # SG-710SCW
Description  HIGH-FREQUENCY CRYSTAL OSCILLATOR
PDF  2 Pages
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Manufacturer  EPSON [Epson Company]
Direct Link  http://www.epsondevice.com
Logo EPSON - Epson Company

SG-710SCW Datasheet(HTML) 2 Page - Epson Company

  SG-710SCW Datasheet HTML 1Page - Epson Company SG-710SCW Datasheet HTML 2Page - Epson Company  
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Specifications (characteristics)
Operating condition and Frequency band
100 MHz
50 MHz
1 MHz
150 MHz
Frequency stability:B
( -20 to +70
°C)
SG-710ECK
SG-710PTK
SG-710PHK
SG-710ECK
SG-710ECK
Frequency stability:C
(-20 to +70
°C)
Frequency stability:M
( -40 to +85
°C)
SG-710PCW/SCW
Frequency stability:B
( -20 to +70
°C)
80
1.8
1.8
1.8
1.8
50
Frequency stability:C
( -20 to +70
°C)
SG-710PCW/SCW
Frequency stability:M
( -40 to +85
°C)
Operating condition
SG-710PTW/STW/PHW/SHW
SG-710PTK
SG-710PHK
80
1.8
50
135
SG-710PTW/STW/PHW/SHW
SG-710PTK
SG-710PHK
80
1.8
50
135
26
135
26
135
26
67
67
67
135
3.3 V
±0.3 V
5 V
±0.5 V
SG-710PCW/SCW
SG-710ECK
Output frequency range
Power source
voltage
Temperature
range
Soldering condition (lead part)
Frequency stability
Current consumption
Output disable current
Output disable current
Duty
Output voltage
Output load condition (fan out)
Output enable
disable input voltage
Output
rise time
Output
fall time
Oscillation start up time
Aging
Shock resistance
f0
VDD-GND
VDD
TSTG
TOPR
TSOL
∆f/f0
Iop
IoE
IST
tw/t
VOH
VOL
CL
VIH
VIL
tTLH
tTHL
tOSC
fa
S.R.
C-MOS level
TTL level
C-MOS level
TTL level
C-MOS level
TTL level
SG-710PTW/STW
SG-710PHW/SHW
SG-710PCW/SCW
Specifications
Remarks
80.0001 MHz to 135.0000 MHz
-0.5 V to +7.0 V
5.0
V±0.5 V
3.3
V±0.3 V
-55 °C to +125 °C
-20
°C to +70 °C
-40
°C to +85 °C
Twice at under 260
°
C within 10 s or under 230 °C within 3 min.
B: ±50
x10-6
C: ±100
x10-6
M: ±100
x10-6
45 mA Max.
28 mA Max.
30 mA Max.
16 mA Max.
50
µA Max.
—
40 % to 60 %
40 % to 60 %
—
VDD-0.4 V Min.
0.4 V Max.
15 pF Max.
10 ms Max.
±5 x 10-6/year Max.
±20 x 10-6 Max.
-20 °C to +70 °C
-40 °C to +85 °C
No load condition
OE=GND(P*W)
ST=GND(S*W)
C-MOS load: 1/2VDD
TTL load: 1.4 V
IOH= -16 mA (*TW/HW)/-8 mA(*CW)
IOL= -16 mA (*TW/HW)/8 mA(*CW)
OE,ST
OE,ST
C-MOS load: 20 %
→80 % VDD
TTL load: 0.4 V
→2.4 V
C-MOS load: 80 %
→20 % VDD
TTL load: 2.4 V
→0.4 V
Time at 4.5 V to be 0 s
Ta=+25 °C, VDD =5 V
Three drops on a hard board from 750 mm or
excitation test with 29400 m/s2 x 0.3 ms x 1/2
sine wave in 3 directions
Max. supply voltage
Operating voltage
Storage temperature
Operating temperature
66.6667 MHz to
135.0000 MHz
Item
Symbol
0.7 VDD Min.
0.2 VDD Max.
3 ns Max.
—
3 ns Max.
—
2.0 V Min.
0.8 V Max.
3 ns Max.
—
3 ns Max.
—
—
4 ns Max.
—
4 ns Max.



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