BC807 datasheet(3/8 Pages) PHILIPS

3 / 8 page

1999 Apr 08

Philips Semiconductors

Product speciﬁcation

PNP general purpose transistor

BC807

THERMAL CHARACTERISTICS

Note

1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

Notes

1. Pulse test: tp ≤ 300 µs; δ≤ 0.02.

2. VBE decreases by about −2 mV/K with increasing temperature.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

500

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB = −20 V

−−−100 nA

IE = 0; VCB = −20 V; Tj = 150 °C

−−−5

µA

IEBO

emitter cut-off current

IC = 0; VEB = −5V

−−−100 nA

hFE

DC current gain

IC = −100 mA; VCE = −1 V; note 1

see Figs 2, 3 and 4

BC807

100

−

600

BC807-16

100

−

250

BC807-25

160

−

400

BC807-40

250

−

600

hFE

DC current gain

IC = −500 mA; VCE = −1 V; note 1

−−

VCEsat

collector-emitter saturation voltage IC = −500 mA; IB = −50 mA; note 1

−−−700 mV

VBE

base-emitter voltage

IC = −500 mA; VCE = −1V;

notes 1 and 2

−−−1.2

collector capacitance

IE =ie = 0; VCB = −10 V; f = 1 MHz

−

transition frequency

IC = −10 mA; VCE = −5 V; f = 100 MHz 80

−−

MHz

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