BC846S datasheet(3/8 Pages) PHILIPS

3 / 8 page

1999 Sep 01

Philips Semiconductors

Product speciﬁcation

NPN general purpose double transistor

BC846S

THERMAL CHARACTERISTICS

Note

1. Refer to SC-88 (SOT363) standard mounting conditions.

CHARACTERISTICS

Tamb =25 °C unless otherwise speciﬁed.

Note

1. Pulse test: tp ≤ 300 µs; δ≤ 0.02.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

416

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Per transistor

ICBO

collector cut-off current

IE = 0; VCB =30V

−−

IE = 0; VCB =30V; Tj = 150 °C

−−

µA

IEBO

emitter cut-off current

IC = 0; VEB =5V

−−

100

hFE

DC current gain

IC = 2 mA; VCE = 5 V

110

−−

VCEsat

collector-emitter saturation

voltage

IC = 10 mA; IB = 0.5 mA

−−

100

IC = 100 mA; IB = 5 mA; note 1

−−

300

VBEsat

base-emitter saturation

voltage

IC = 10 mA; IB = 0.5 mA

−

770

−

collector capacitance

IE =ie = 0; VCB =10V; f=1MHz

−−

1.5

transition frequency

IC = 10 mA; VCE =5V;

f = 100 MHz

100

−−

MHz

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