Nexperia

BAS21AW

High-voltage switching diode

10. Characteristics

Table 7. Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per diode

IF = 100 mA; Tamb = 25 °C

-

-

1

V

VF

forward voltage

IF = 200 mA; Tamb = 25 °C

-

-

1.25

V

VR = 200 V; Tamb = 25 °C

-

-

100

nA

IR

reverse current

VR = 200 V; Tj = 150 °C

-

-

100

µA

Cd

diode capacitance

VR = 0 V; f = 1 MHz; Tamb = 25 °C

-

-

2

pF

trr

reverse recovery time

IF = 10 mA; IR = 10 mA; RL = 100 Ω;

IR(meas) = 1 mA; Tamb = 25 °C

-

-

50

ns

VF (V)

0

1.6

1.2

0.4

0.8

006aab212

200

400

600

IF

(mA)

0

(1)

(3)

(4)

(2)

(1) Tamb = 150° C

(2) Tamb = 85° C

(3) Tamb = 25° C

(4) Tamb = -40° C

Fig. 1. Forward current as a function of forward

voltage; typical values

mbg703

10

1

102

IFSM

(A)

10- 1

tp (µs)

1

104

103

10

102

Based on square wave currents

Tj = 25 °C prior to surge

Fig. 2. Maximum permissible non-repetitive peak

forward current as a function of pulse duration

BAS21AW

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Product data sheet

5 May 2023

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