BC856T datasheet(3/8 Pages) PHILIPS

3 / 8 page

1999 Apr 26

Philips Semiconductors

Product speciﬁcation

PNP general purpose transistors

BC856T; BC857T

THERMAL CHARACTERISTICS

Note

1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

Tamb =25 °C unless otherwise speciﬁed.

Note

1. Pulse test: tp ≤ 300 µs; δ≤ 0.02.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

833

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB = −30 V

−−−15

IE = 0; VCB = −30 V; Tj = 150 °C

−−−5

µA

IEBO

emitter cut-off current

IC = 0; VEB = −5V

−−−100 nA

hFE

DC current gain

IC = −2 mA; VCE = −5V

BC856AT; BC857AT

125

−

250

BC856BT; BC857BT

220

−

475

BC857CT

420

−

800

VCEsat

collector-emitter saturation voltage

IC = −10 mA; IB = −0.5 mA

−−−200 mV

IC = −100 mA; IB = −5 mA; note 1

−−−400 mV

VBE

base-emitter voltage

IC = −2 mA; VCE = −5V

−600 −−750 mV

IC = −10 mA; VCE = −5V

−−−820 mV

collector capacitance

IE =ie = 0; VCB = −10 V; f = 1 MHz

−−

2.5

emitter capacitance

IC =ic = 0; VEB = −500 mV; f = 1 MHz

−

transition frequency

IC = −10 mA; VCE = −5 V; f = 100 MHz 100

−−

MHz

noise ﬁgure

IC = −200 µA; VCE = −5 V; RS =2kΩ;

f = 1 kHz; B = 220 Hz

−−

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