BC860 datasheet(3/8 Pages) PHILIPS

3 / 8 page

1999 May 28

Philips Semiconductors

Product speciﬁcation

PNP general purpose transistors

BC859; BC860

THERMAL CHARACTERISTICS

Note

1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

Notes

1. VBEsat decreases by about −1.7 mV/K with increasing temperature.

2. VBE decreases by about −2 mV/K with increasing temperature.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

500

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB = −30 V

−−1

−15

IE = 0; VCB = −30 V; Tj = 150 °C

−−−4

µA

IEBO

emitter cut-off current

IC = 0; VEB = −5V

−−−100 nA

hFE

DC current gain

IC = −2 mA; VCE = −5V;

see Figs 2 and 3

BC859B; BC860B

220

−

475

BC859C; BC860C

420

−

800

VCEsat

collector-emitter saturation

voltage

IC = −10 mA; IB = −0.5 mA

−−75

−300 mV

IC = −100 mA; IB = −5mA

−−250 −650 mV

VBEsat

base-emitter saturation voltage

IC = −10 mA; IB = −0.5 mA; note 1

−−700 −

IC = −100 mA; IB = −5 mA; note 1

−−850 −

VBE

base-emitter voltage

IC = −2 mA; VCE = −5 V; note 2

−600 −650 −750 mV

IC = −10 mA; VCE = −5 V; note 2

−−−820 mV

collector capacitance

IE =ie = 0; VCB = −10 V; f = 1 MHz

−

4.5

−

emitter capacitance

IC =ic = 0; VEB = −500 mV; f = 1 MHz

−

transition frequency

IC = −10 mA; VCE = −5 V; f = 100 MHz 100

−−

MHz

noise ﬁgure

IC = −200 µA; VCE = −5 V; RS =2kΩ;

f = 30 Hz to 15 kHz

BC859B; BC860B;

BC859C; BC860C

−−

4dB

noise ﬁgure

IC = −200 µA; VCE = −5 V; RS =2kΩ;

f = 1 kHz; B = 200 Hz

BC859B; BC860B;

BC859C; BC860C

−−

4dB

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