BC875 datasheet(3/8 Pages) PHILIPS

3 / 8 page

1999 May 28

Philips Semiconductors

Product speciﬁcation

NPN Darlington transistors

BC875; BC879

THERMAL CHARACTERISTICS

Note

1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

150

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICES

collector cut-off current

BC875

VBE = 0; VCE =45V

−−

BC879

VBE = 0; VCE =80V

−−

IEBO

emitter cut-off current

IC = 0; VEB =4V

−−

hFE

DC current gain

IC = 150 mA; VCE = 10 V; see Fig.2

1000

−−

IC = 0.5 A; VCE = 10 V; see Fig.2

2000

−−

VCEsat

collector-emitter saturation voltage

IC = 0.5 A; IB = 0.5 mA

−−

1.3

IC = 1 A; IB =1mA

−−

1.8

VBEsat

base-emitter saturation voltage

IC = 1 A; IB =1mA

−−

2.2

transition frequency

IC = 0.5 A; VCE = 5 V; f = 100 MHz

−

200

−

MHz

Switching times (between 10% and 90% levels)

ton

turn-on time

ICon = 500 mA; IBon = 0.5 mA;

IBoff = −0.5 mA

−

500

−

toff

turn-off time

−

1300

−

BC875 Datasheet(PDF) 3 Page - NXP Semiconductors

BC875 Datasheet(HTML) 3 Page - NXP Semiconductors

Html Pages

1 2 3 4 5 6 7 8

Datasheet Download

Link URL