BCF29 datasheet(4/8 Pages) PHILIPS

4 / 8 page

1997 May 22

Philips Semiconductors

Product speciﬁcation

PNP general purpose transistors

BCF29; BCF30

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB = −32 V

−−−100 nA

IE = 0; VCB = −32 V; Tj = 100 °C

−−−10

µA

IEBO

emitter cut-off current

IC = 0; VEB = −5V

−−−100 nA

hFE

DC current gain

IC = −10 µA; VCE = −5V

BCF29

−

BCF30

−

150

−

hFE

DC current gain

IC = −2 mA; VCE = −5V

BCF29

120

−

260

BCF30

215

−

500

VCEsat

collector-emitter saturation voltage IC = −10 mA; IB = −0.5 mA

−−80

−300 mV

IC = −50 mV; IB = −2.5 mA

−−150 −

VBEsat

base-emitter saturation voltage

IC = −10 mA; IB = −0.5 mA

−−720 −

IC = −50 mA; IB = −2.5 mA

−−810 −

VBE

base-emitter voltage

IC = −2 mA; VCE = −5V

−600 −−750 mV

collector capacitance

IE =ie = 0; VCB = −10 V; f = 1 MHz

−

4.5

−

transition frequency

IC = −10 mA; VCE = −5 V; f = 100 MHz 100

−−

MHz

noise ﬁgure

IC = −200 µA; VCE = −5 V; RS =2kΩ;

f = 1 kHz; B = 200 Hz

−

14dB

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