1999 Apr 08

2

Philips Semiconductors

Product specification

PNP Darlington transistors

BCV26; BCV46

FEATURES

• High current (max. 500 mA)

• Low voltage (max. 60 V)

• Very high DC current gain (min. 10000).

APPLICATIONS

• Where very high amplification is required.

DESCRIPTION

PNP Darlington transistor in a SOT23 plastic package.

NPN complements: BCV27 and BCV47.

MARKING

Note

1.

∗ = p : Made in Hong Kong.

∗ = t : Made in Malaysia.

TYPE NUMBER

BCV26

FD

∗

BCV46

FE

∗

PINNING

PIN

DESCRIPTION

1

base

2

emitter

3

collector

Fig.1 Simplified outline (SOT23) and symbol.

handbook, halfpage

1

3

2

MAM299

13

2

TR2

TR1

Top view

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

1.

Transistor mounted on an FR4 printed-circuit board.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-base voltage

open emitter

BCV26

−−40

V

BCV46

−−80

V

collector-emitter voltage

BCV26

−−30

V

BCV46

−−60

V

emitter-base voltage

open collector

−−10

V

collector current (DC)

−−500

mA

peak collector current

−−800

mA

base current (DC)

−−100

mA

total power dissipation

−

250

mW

storage temperature

−65

+150

°C

junction temperature

−

150

°C

operating ambient temperature

−65

+150

°C