BCV61 datasheet(3/8 Pages) PHILIPS

3 / 8 page

1999 Apr 08

Philips Semiconductors

Product speciﬁcation

NPN general purpose double transistor

BCV61

THERMAL CHARACTERISTICS

Note

1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

500

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Transistor TR1

ICBO

collector cut-off current

IE = 0; VCB =30V

−−

IE = 0; VCB =30V; Tj = 150 °C

−−

µA

IEBO

emitter cut-off current

IC = 0; VEB =5V

−−

100

hFE

DC current gain

IC = 100 µA; VCE = 5 V

100

−−

IC = 2 mA; VCE =5V

110

−

800

VCEsat

collector-emitter saturation

voltage

IC = 10 mA; IB = 0.5 mA

−

250

IC = 100 mA; IB =5mA

−

200

600

VBEsat

base-emitter saturation

voltage

IC = 10 mA; IB = 0.5 mA; note 1

−

700

−

IC = 100 mA; IB = 5 mA; note 1

−

900

−

VBE

base-emitter voltage

IC = 2 mA; VCE = 5 V; note 2

580

660

700

IC = 10 mA; VCE = 5 V; note 2

−−

770

collector capacitance

IE =ie = 0; VCB =10V; f=1MHz

−

2.5

−

transition frequency

IC = 10 mA; VCE = 5 V; f = 100 MHz

100

−−

MHz

noise ﬁgure

IC = 200 µA; VCE =5V; RS =2kΩ;

f = 1 kHz; B = 200 Hz

−−

Transistor TR2

VEBS

base-emitter forward voltage VCB = 0; IE = −250 mA

−−−1.8

VCB = 0; IE = −10 µA

−400

−−

hFE

DC current gain

IC = 2 mA; VCE =5V

BCV61A

110

−

220

BCV61B

200

−

450

BCV61C

420

−

800

BCV61 Datasheet(PDF) 3 Page - NXP Semiconductors

BCV61 Datasheet(HTML) 3 Page - NXP Semiconductors

Html Pages

1 2 3 4 5 6 7 8

Datasheet Download

Link URL