BCV62 datasheet(3/8 Pages) PHILIPS

3 / 8 page

1999 Apr 08

Philips Semiconductors

Product speciﬁcation

PNP general purpose double transistor

BCV62

THERMAL CHARACTERISTICS

Note

1. Device mounted on an FR4 printed-circuit board.

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

500

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX. UNIT

Transistor TR1

ICBO

collector cut-off current

IE = 0; VCB = −30 V

−−

−15

IE = 0; VCB = −30 V; Tj = 150 °C

−−

−5

µA

IEBO

emitter cut-off current

IC = 0; VEB = −5V

−−

−100 nA

hFE

DC current gain

IC = −100 µA; VCE = −5 V

100

−−

IC = −2 mA; VCE = −5 V

100

−

800

VCEsat

collector-emitter saturation

voltage

IC = −10 mA; IB = −0.5 mA

−−75

−300 mV

IC = −100 mA; IB = −5mA

−−250 −650 mV

VBEsat

base-emitter saturation

voltage

IC = −10 mA; IB =− 0.5 mA; note 1

−−700 −

IC = −100 mA; IB = −5 mA; note 1

−−850 −

VBE

base-emitter voltage

IC = −2 mA; VCE = −5 V; note 1

−600 −650 −750 mV

IC = −10 mA; VCE = −5 V; note 2

−−

−820 mV

collector capacitance

IE =ie = 0; VCB = −10 V

−

4.5

−

transition frequency

IC = −10 mA; VCE = −5 V; f = 100 MHz

100

−−

MHz

noise ﬁgure

IC = −200 µA; VCE = −5 V; RS =2kΩ;

f = 1 kHz; B = 200 Hz

−−

Transistor TR2

VEBS

base-emitter forward voltage

IE = 250 mA; VCB =0

−−

1.5

IE =10 µA; VCB = 0

400

−−

hFE

DC current gain

IC = −2 mA; VCE = −5V

BCV62A

125

−

250

BCV62B

220

−

475

BCV62C

420

−

800

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