1999 May 21

2

Philips Semiconductors

Product specification

NPN general purpose double transistors

BCV63; BCV63B

FEATURES

• Low current (max. 100 mA)

• Low voltage (max. 30 and 6 V).

APPLICATIONS

• General purpose switching and amplification

• For use in Schmitt-trigger applications.

DESCRIPTION

NPN double transistor in a SOT143B plastic package.

PNP complement: BCV64B.

PINNING

PIN

DESCRIPTION

1

collector TR2 and base TR1

2

collector TR1

3

emitter TR1 and TR2

4

base TR2

Fig.1 Simplified outline (SOT143B) and symbol.

handbook, halfpage

4

12

3

MAM316

Top view

21

34

TR2

TR1

MARKING

TYPE NUMBER

MARKING CODE

BCV63

D95

BCV63B

D96

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

1. Transistor mounted on a printed-circuit board.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-base voltage

open emitter

TR1

−

30

V

TR2

−

6V

collector-emitter voltage

open base

TR1

−

30

V

TR2

−

6V

emitter-base voltage

open collector

−

6V

collector current (DC)

−

100

mA

peak collector current

−

200

mA

base current (DC)

−

100

mA

total power dissipation

−

250

mW

storage temperature

−65

+150

°C

junction temperature

−

150

°C

operating ambient temperature

−65

+150

°C