Data Sheet PL10716EJ01V0DS

6

NX8530NH, NX8531NH

ELECTRO-OPTICAL CHARACTERISTICS (TLD = Tset, TC =

−5 to +75°C, BOL)

Parameter

Symbol

Conditions

MIN.

TYP.

MAX.

Unit

Laser Set Temperature

Tset

35

50

°C

Operating Voltage

Vop

0.9

2.0

V

Threshold Current

Ith

5

20

40

mA

Optical Output Power (average)

PAVG

IF = Iop, TLD = Tset (NX8530NH)

0

4

dBm

IF = Iop, TLD = Tset (NX8531NH)

4

7

Operating Current

Iop

100

mA

Threshold Output Power

Pth

IF = Ith

100

μW

Slope Efficiency

η

CW (NX8530NH)

0.04

0.1

W/A

CW (NX8531NH)

0.08

0.18

Peak Emission Wavelength

λp

Pf = 10 mW, CW, TLD = Tset

1 528

ITU-T

*1

1 563

nm

1 564

1 610

Side Mode Suppression Ratio

SMSR

CW, IF = Iop

30

35

dB

Relative Intensity Noise

RIN

CW, IF = Iop, f = 20 MHz to 3 GHz

−140

dB/Hz

Rise Time

tr

20-80%, TC = 25

°C

120

ps

Fall Time

tf

80-20%, TC = 25

°C

120

ps

Electrical Input Return Loss

S11

f = 50 MHz to 3 GHz

6

dB

f = 3 GHz to 5 GHz

3

Band Width

BW

−3 dB, IF = Iop

2.5

GHz

Dispersion Penalty

DP

TC = 25

°C*2

2.0

dB

*1 Available for DWDM wavelengths based on ITU-T recommendations

(100 GHz grid, please refer to the ORDERING INFORMATION)

*2 2.48832 Gb/s, PRBS 2

23

−1, NRZ, Extinction Ratio ≥ 9.0 dB, 2 400 ps/nm