BCW70 datasheet(3/8 Pages) PHILIPS

3 / 8 page

1999 Apr 19

Philips Semiconductors

Product speciﬁcation

PNP general purpose transistors

BCW69; BCW70

THERMAL CHARACTERISTICS

Note

1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

Note

1. Pulse test: tp ≤ 300 µs; δ≤ 0.02.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

500

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB = −20 V

−−−100

IE = 0; VCB = −20 V; Tj = 100 °C

−−−10

µA

IEBO

emitter cut-off current

IC = 0; VEB = −5V

−−−100

hFE

DC current gain

IC = −10 µA; VCE = −5V

BCW69

−

BCW70

−

150

−

DC current gain

IC = −2 mA; VCE = −5V

BCW69

120

−

260

BCW70

215

−

500

VCEsat

collector-emitter saturation

voltage

IC = −10 mA; IB = −0.5 mA

−−80

−300

IC = −50 mA; IB = −2.5 mA; note 1

−−150

−

VBEsat

base-emitter saturation voltage

IC = −10 mA; IB = −0.5 mA

−−720

−

IC = −50 mA; IB = −2.5 mA; note 1

−−810

−

VBE

base-emitter voltage

IC = −2 mA; VCE = −5V

−600

−−750

collector capacitance

IE =Ie = 0; VCB = −10 V; f = 1 MHz −

4.5

−

transition frequency

IC = −10 mA; VCE = −5V;

f = 100 MHz

100

−−

MHz

noise ﬁgure

IC = −200 µA; VCE = −5V;

RS =2kΩ; f = 1 kHz; B = 200 Hz

−−

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