Nexperia

BAS516

High-speed switching diode

006aab133

102

IR

(µA)

VR (V)

0

100

80

40

60

20

10

1

10-1

10-2

10-3

10-4

10-5

(1)

(2)

(3)

(4)

(1) Tamb = 150 °C

(2) Tamb = 85 °C

(3) Tamb = 25 °C

(4) Tamb = -40 °C

Fig. 3. Reverse current as a function of reverse

voltage; typical values

0

8

16

12

4

0.8

0.6

0

0.4

0.2

mbg446

VR (V)

Cd

(pF)

f = 1 MHz; Tamb = 25 °C

Fig. 4. Diode capacitance as a function of reverse

voltage; typical values

11. Test information

trr

(1)

+ IF

t

output signal

tr

tp

t

10 %

90 %

VR

input signal

V = VR + IF × RS

RS = 50 Ω

IF

D.U.T.

Ri = 50 Ω

SAMPLING

OSCILLOSCOPE

mga881

(1) IR = 1 mA

Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty cycle δ = 0.05

Oscilloscope: rise time tr = 0.35 ns

Fig. 5. Reverse recovery time test circuit and waveforms

tr

t

tp

10 %

90 %

I

input signal

RS = 50 Ω

I

Ri = 50 Ω

OSCILLOSCOPE

1 kΩ

450 Ω

D.U.T.

mga882

VFR

t

output signal

V

Input signal: forward pulse rise time tr = 20 ns; forward current pulse duration tp ≥ 100 ns; duty cycle δ ≤ 0.005

Fig. 6. Forward recovery voltage test circuit and waveforms

BAS516

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Product data sheet

1 October 2022

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