Nexperia

BAT32ALS

General-purpose Schottky diode

10. Characteristics

Table 7. Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

IF = 0.1 mA; tp ≤ 300 µs; δ ≤ 0.02;

pulsed; Tamb = 25 °C

-

-

190

mV

IF = 1 mA; tp ≤ 300 µs; δ ≤ 0.02;

pulsed; Tamb = 25 °C

-

-

250

mV

IF = 10 mA; tp ≤ 300 µs; δ ≤ 0.02;

pulsed; Tamb = 25 °C

-

-

300

mV

IF = 100 mA; tp ≤ 300 µs; δ ≤ 0.02;

Tamb = 25 °C

-

-

400

mV

VF

forward voltage

IF = 200 mA; tp ≤ 300 µs; δ ≤ 0.02;

Tamb = 25 °C

-

-

480

mV

VR = 10 V; Tamb = 25 °C

-

-

10

µA

IR

reverse current

VR = 30 V; Tamb = 25 °C

-

-

50

µA

Cd

diode capacitance

VR = 1 V; f = 1 MHz; Tamb = 25 °C

-

-

25

pF

001aaa351

1

10

102

103

IF

(mA)

10- 1

VF (V)

0

0.5

0.4

0.2

0.3

0.1

(1)

(2) (3)

(4)

(1) Tamb = 150 °C

(2) Tamb = 125 °C

(3) Tamb = 85 °C

(4) Tamb = 25 °C

Fig. 1. Forward current as a function of forward

voltage; typical values

001aaa352

VR (V)

0

30

20

10

10- 1

10- 2

10

1

102

IR

(mA)

10- 3

(1)

(2)

(3)

(4)

(1) Tamb = 150 °C

(2) Tamb = 125 °C

(3) Tamb = 85 °C

(4) Tamb = 25 °C

Fig. 2. Reverse current as a function of reverse

voltage; typical values

BAT32ALS

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Product data sheet

4 August 2022

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