BCY71 datasheet(4/8 Pages) PHILIPS

4 / 8 page

1997 Jul 11

Philips Semiconductors

Product speciﬁcation

PNP general purpose transistors

BCY70; BCY71

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

ICBO

collector cut-off current

BCY70

IE = 0; VCB = −50 V

−−20

IE = 0; VCB = −50 V; Tj = 100 °C

−−5

µA

ICBO

collector cut-off current

BCY71

IE = 0; VCB = −45 V

−−20

IE = 0; VCB = −45 V; Tj = 100 °C

−−5

µA

IEBO

emitter cut-off current

IC = 0; VEB = −4V

−−10

IC = 0; VEB = −4 V; Tj = 100 °C

−−2

µA

IC = 0; VEB = −5V

−−500

hFE

DC current gain

VCE = −1V

IC = −10 µA60

−

IC = −0.1 mA

−

IC = −1 mA

100

−

IC = −50 mA

−

hFE

DC current gain

IC = −10 mA; VCE = −1V

BCY70

100

−

BCY71

−

500

VCEsat

collector-emitter saturation voltage

IC = −10 mA; IB = −1mA

−−250

IC = −50 mA; IB = −5mA

−−500

VBEsat

base-emitter saturation voltage

IC = −10 mA; IB = −1mA

−600

−900

IC = −50 mA; IB = −5mA

−−1.2

collector capacitance

IE =ie = 0; VCB = −10 V; f = 1 MHz

−

6pF

emitter capacitance

IC =ic = 0; VEB = −1 V; f = 1 MHz

−

8pF

transition frequency

IC = −10 mA; VCE = −20 V; f = 100 MHz

250

−

MHz

noise ﬁgure

IC = −100 µA; VCE = −5 V; RS =1kΩ;

f = 10 Hz to 15.7 kHz

BCY70

−

6dB

BCY71

−

2dB

Switching times (between 10% and 90% levels)

BCY70

ton

turn-on time

ICon = −10 mA; IBon = −1 mA; IBoff =1mA −

delay time

−

rise time

−

toff

turn-off time

−

500

storage time

−

420

fall time

−

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