1997 Jun 20

4

Philips Semiconductors

Product specification

NPN general purpose transistors

BCY87; BCY88; BCY89

Note

1. These characteristics are valid under the following conditions:

b) Sum of the emitter currents from 10 to 100

Complete device; note 1

ratio of collector currents

BCY87

0.9

−

1.11

BCY88

0.8

−

1.25

BCY89

0.67

−

1.5

difference between

base-emitter voltages

BCY87

−−

3mV

BCY88

−−

6mV

BCY89

−−

10

mV

difference between base

currents

BCY87

−−

25

nA

BCY88

−−

80

nA

BCY89

−−

300

nA

DC current gain ratio

BCY87

0.9

−

1.11

BCY88

0.8

−

1.25

BCY87

−

13

µV/K

BCY88

−

26

µV/K

BCY89

−

410

µV/K

equivalent differential current

BCY87

−−

0.5

nA/K

BCY88

−−

2

nA/K

BCY89

−−

10

nA/K

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

I

1C

I

2C

-------

V

1B

1E

–

V

2B

2E

–

–

I

1B

I

2B

–

h

1FE

h

2FE

-----------

∆V

∆T

--------

∆I

∆T

-------