1999 Apr 21

2

Philips Semiconductors

Product specification

PNP power transistor

BD231

FEATURES

• High current (max. 1.5 A)

• Low voltage (max. 80 V).

APPLICATIONS

• Driver stages in television circuits.

DESCRIPTION

PNP power transistor in a TO-126; SOT32 plastic

package. NPN complement: BD230.

PINNING

PIN

DESCRIPTION

1

emitter

2

collector, connected to metal part of

mounting surface

3

base

Fig.1

Simplified outline (TO-126; SOT32)

and symbol.

handbook, halfpage

MAM272

12

3

Top view

1

2

3

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-base voltage

open emitter

−−100

V

collector-emitter voltage

open base

−−80

V

emitter-base voltage

open collector

−−5V

collector current (DC)

−−1.5

A

peak collector current

−−3A

peak base current

−−1A

total power dissipation

−

12.5

W

storage temperature

−65

+150

°C

junction temperature

−

150

°C

operating ambient temperature

−65

+150

°C