BF1101R datasheet(8/16 Pages) PHILIPS

8 / 16 page

1999 May 14

Philips Semiconductors

Product speciﬁcation

N-channel dual-gate MOS-FETs

BF1101; BF1101R; BF1101WR

Fig.17 Input admittance as a function of frequency;

typical values.

VDS = 5 V; VG2 =4V.

ID = 12 mA; Tamb =25 °C.

handbook, halfpage

MGS311

102

10−1

102

103

f (MHz)

yis

(mS)

bis

gis

Fig.18 Reverse transfer admittance and phase as

a function of frequency; typical values.

VDS = 5 V; VG2 =4V.

ID = 12 mA; Tamb =25 °C.

handbook, halfpage

MGS312

102

ϕrs

(deg)

−102

−1

−10

102

103

f (MHz)

|yrs|

(mS)

|yrs|

ϕrs

Fig.19 Forward transfer admittance and phase as

a function of frequency; typical values.

VDS = 5 V; VG2 =4V.

ID = 12 mA; Tamb =25 °C.

handbook, halfpage

MGS313

102

ϕfs

(deg)

−102

−1

−10

102

103

f (MHz)

|yfs|

(mS)

ϕfs

|yfs|

Fig.20 Output admittance as a function of

frequency; typical values.

VDS = 5 V; VG2 =4V.

ID = 12 mA; Tamb =25 °C.

handbook, halfpage

MGS314

10−1

102

103

f (MHz)

yos

(mS)

bos

gos

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