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BF1101WR Datasheet(PDF) 3 Page - NXP Semiconductors

Part # BF1101WR
Description  N-channel dual-gate MOS-FETs
PDF  16 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BF1101WR Datasheet(HTML) 3 Page - NXP Semiconductors

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1999 May 14
3
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FETs
BF1101; BF1101R; BF1101WR
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Ts is the temperature of the soldering point of the source lead.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage
−
7V
ID
drain current
−
30
mA
IG1
gate 1 current
−±10
mA
IG2
gate 2 current
−±10
mA
Ptot
total power dissipation
Ts ≤ 110 °C; note 1
−
200
mW
Tstg
storage temperature
−65
+150
°C
Tj
operating junction temperature
−
+150
°C
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-s
thermal resistance from junction to soldering point
200
K/W
Fig.4 Power derating curve.
handbook, halfpage
0
50
100
200
250
0
200
MGL615
150
150
100
50
Ptot
(mW)
Ts (°C)



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