TSDF52830YS datasheet(3/7 Pages) VISHAY

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VISHAY

TSDF52830YS

Document Number 85178

Rev. 1.1, 26-Aug-04

Vishay Semiconductors

www.vishay.com

Electrical DC Characteristics

Tamb = 25 °C, unless otherwise specified

Amplifier 1

Following data are valid for operating amplifier 1 (pin 1, 3, 5, 2) which is optimized for UHF applications

Amplifier 2

Following data are valid for operating amplifier 2 (pin 6, 4, 5, 2) which is optimized for VHF applications

Parameter

Test condition

Symbol

Min

Typ.

Max

Unit

Drain - source breakdown

voltage

ID = 10 µA, VG2S = VG1S = 0

V(BR)DSS

Gate 1 - source breakdown

voltage

+ IG1S = 10 mA, VG2S = VDS = 0 + V(BR)G1SS

710

± IG2S = 10 mA, VG1S = VDS = 0 ± V(BR)G2SS

710

Gate 1 - source leakage current + VG1S = 5 V, VG2S = VDS = 0

+ IG1SS

Gate 2 - source leakage current ± VG2S = 5 V, VG1S = VDS = 0

± IG2SS

Drain - source operating current VDS = VRG1 = 5 V, VG2S = 4 V,

RG1 = 100 kΩ

IDSO

812

Gate 1 - source cut-off voltage

VDS = 5 V, VG2S = 4, ID = 20 µAVG1S(OFF)

0.3

1.0

Gate 2 - source cut-off voltage

VDS = VRG1 = 5 V, RG1 =100 kΩ,

ID = 20 µA

VG2S(OFF)

0.3

1.2

Parameter

Test condition

Symbol

Min

Typ.

Max

Unit

Gate 1 - source breakdown

voltage

+ IG1S = 10 mA, VG2S = VDS = 0 + V(BR)G1SS

710

Gate 2 - source breakdown

voltage

± IG2S = 10 mA, VG1S = VDS = 0 ± V(BR)G2SS

710

Gate 1 - source leakage current + VG1S = 5 V, VG2S = VDS = 0

+ IG1SS

µA

Gate 2 - source leakage current ± VG2S = 5 V, VG1S = VDS = 0

± IG2SS

Drain - source operating current VDS = VRG1 = 5 V, VG2S = 4 V,

Gate 1 = nc

IDSP

813

Gate 2 - source cut-off voltage

VDS = VRG1 = 5 V, Gate 1 = nc,

ID = 20 µA

VG2S(OFF)

0.3

1.2

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