BF370 datasheet(3/8 Pages) PHILIPS

3 / 8 page

1999 Apr 21

Philips Semiconductors

Product speciﬁcation

NPN medium frequency transistor

BF370

THERMAL CHARACTERISTICS

Note

1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

250

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB =20V

−−

400

IE = 0; VCB =20V; Tj = 125 °C

−−

µA

IEBO

emitter cut-off current

IC = 0; VEB =2V

−−

100

hFE

DC current gain

IC = 10 mA; VCE =1V

−−

collector capacitance

IE =ie = 0; VCB =10V; f=1MHz

−

2.2

−

emitter capacitance

IC =ic = 0; VEB = 1 V; f = 1 MHz

−−

4.5

Cre

feedback capacitance

IC = 0; VCB = 10 V; f = 1 MHz

−

1.6

−

transition frequency

VCE = 10 V; f = 100 MHz

IC = 10 mA

500

−−

MHz

IC = 40 mA

490

−−

MHz

BF370 Datasheet(PDF) 3 Page - NXP Semiconductors

BF370 Datasheet(HTML) 3 Page - NXP Semiconductors

Html Pages

1 2 3 4 5 6 7 8

Datasheet Download

Link URL