1997 Apr 09

3

Philips Semiconductors

Product specification

NPN high-voltage transistor

BF419

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

1. Precautions should be taken during switch-on of the BF419 where an overshoot of current is likely to occur.

The amplitude of the overshoot depends on the relative magnitude of stray external capacities to the transistor

collector capacity. It is desirable to keep the stray capacities to a minimum by short lead lengths etc. so as to minimize

the area of the switching path.

THERMAL CHARACTERISTICS

CHARACTERISTICS

Note

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-base voltage

open emitter

−

300

V

collector-emitter voltage

open base

−

250

V

emitter-base voltage

open collector

−

5V

collector current (DC)

−

100

mA

peak collector current

note 1

−

300

mA

peak base current

−

100

mA

total power dissipation

−

6W

−

800

mW

storage temperature

−65

+150

°C

junction temperature

−

150

°C

operating ambient temperature

−65

+150

°C

SYMBOL

PARAMETER

VALUE

UNIT

thermal resistance from junction to ambient

100

K/W

thermal resistance from junction to mounting base

10

K/W

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

collector cut-off current

−

50

nA

emitter cut-off current

−

50

nA

DC current gain

45

−

collector-emitter saturation voltage

−

6V

collector capacitance

−

4.5

pF

feedback capacitance

−

3.5

pF

transition frequency

−

MHz