BF459 datasheet(3/8 Pages) PHILIPS

3 / 8 page

1999 Apr 21

Philips Semiconductors

Product speciﬁcation

NPN high-voltage transistors

BF458; BF459

THERMAL CHARACTERISTICS

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

104

K/W

Rth j-mb

thermal resistance from junction to mounting base

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICBO

collector cut-off current

BF458

IE = 0; VCB = 200 V

−−

IE = 0; VCB = 200 V; Tj = 150 °C

−−

µA

ICBO

collector cut-off current

BF459

IE = 0; VCB = 250 V

−−

IE = 0; VCB = 250 V; Tj = 150 °C

−−

µA

IEBO

emitter cut-off current

IC = 0; VEB =5V

−−

100

hFE

DC current gain

IC = 30 mA; VCE =10V

−−

VCEsat

collector-emitter saturation

voltage

IC = 30 mA; IB =6mA

−−

collector capacitance

IE =ie = 0; VCB = 30 V; f = 1 MHz

−−

4.5

Cre

feedback capacitance

IC =ic = 0; VCE = 30 V; f = 1 MHz

−−

3.5

transition frequency

IC = 15 mA; VCE = 10 V; f = 100 MHz

−

MHz

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