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IRF640T Datasheet(PDF) 1 Page - STMicroelectronics |
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IRF640T Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 12 page ![]() October 2006 Rev 1 1/12 12 ■ Extremely high dv/dt capability ■ Gate charge minimized ■ Very low intrinsic capacitances Description This Power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources. Applications ■ Switching application Internal schematic diagram General features Type VDSS RDS(on) ID IRF640T 200V <0.16 Ω 15A 1 2 3 TO-220 IRF640T N-channel 200V - 0.15 Ω - 15A - TO-220 MESH OVERLAY™ Power MOSFET www.st.com Order codes Part number Marking Package Packaging IRF640T IRF640T TO-220 Tube |
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