1996 Dec 09

3

Philips Semiconductors

Product specification

PNP high-voltage transistors

BF470; BF472

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

THERMAL CHARACTERISTICS

Note

1. Transistor mounted on a printed-circuit board, maximum lead length 4 mm; mounting pad for collector lead

minimum 10

× 10 mm.

CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-base voltage

open emitter

BF470

−−250

V

BF472

−−300

V

collector-emitter voltage

open base

BF470

−−250

V

BF472

−−300

V

emitter-base voltage

open collector

−−5V

collector current (DC)

−−50

mA

peak collector current

−−100

mA

peak base current

−−50

mA

total power dissipation

−

1.8

W

storage temperature

−65

+150

°C

junction temperature

−

150

°C

operating ambient temperature

−65

+150

°C

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

thermal resistance from junction to ambient

in free air; note 1

100

K/W

thermal resistance from junction to mounting base

20

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector cut-off current

−−10

nA

−−10

µA

emitter cut-off current

−−50

nA

DC current gain

50

−

collector-emitter saturation voltage

−−600

mV

feedback capacitance

−

1.8

pF

transition frequency

−

MHz