BF488 datasheet(3/8 Pages) PHILIPS

3 / 8 page

1999 Apr 27

Philips Semiconductors

Product speciﬁcation

PNP high-voltage transistor

BF488

THERMAL CHARACTERISTICS

Note

1. Transistor mounted on a printed-circuit board.

CHARACTERISTICS

Tj =25 °C unless otherwise stated.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

150

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB = −300 V

−−20

IE = 0; VCB = −200 V; Tj = 150 °C

−−20

µA

IEBO

emitter cut-off current

IC = 0; VEB = −5V

−−100

hFE

DC current gain

IC = −25 mA; VCE = −20 V

−

IC = −40 mA; VCE = −20 V

−

VCEsat

collector-emitter saturation voltage

IC = −20 mA; IB = −2mA

−−0.5

collector capacitance

IE =ie = 0; VCB = −20 V; f = 1 MHz

−

4pF

Cre

feedback capacitance

IC =ic = 0; VCE = −30 V; f = 1 MHz

−

2.5

transition frequency

IC = −10 mA; VCE = −10 V;

f = 100 MHz

110

MHz

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