BF556B datasheet(4/11 Pages) PHILIPS

4 / 11 page

1996 Jul 29

Philips Semiconductors

Product speciﬁcation

N-channel silicon junction

ﬁeld-effect transistors

BF556A; BF556B; BF556C

DYNAMIC CHARACTERISTICS

Tamb =25 °C; unless otherwise specified.

SYMBOL

PARAMETER

CONDITIONS

TYP.

UNIT

Cis

input capacitance

VDS = 15 V; VGS = −10 V; f = 1 MHz

1.7

VDS = 15 V; VGS = 0; f = 1 MHz

Crs

reverse transfer capacitance

VDS = 15 V; VGS = −10 V; f = 1 MHz

0.8

VDS = 15 V; VGS = 0; f = 1 MHz

0.9

gis

common source input conductance

VDS = 10 V; ID = 1 mA; f = 100 MHz

µS

VDS = 10 V; ID = 1 mA; f = 450 MHz

300

µS

gfs

common source transfer conductance

VDS = 10 V; ID = 1 mA; f = 100 MHz

VDS = 10 V; ID = 1 mA; f = 450 MHz

1.8

grs

common source reverse conductance

VDS = 10 V; ID = 1 mA; f = 100 MHz

−6

µS

VDS = 10 V; ID = 1 mA; f = 450 MHz

−40

µS

gos

common source output conductance

VDS = 10 V; ID = 1 mA; f = 100 MHz

µS

VDS = 10 V; ID = 1 mA; f = 450 MHz

µS

equivalent input noise voltage

VDS =10V; ID = 1 mA; f = 100 Hz

nV/

√Hz

Fig.2

Drain current as a function of gate-source

cut-off voltage; typical values.

VDS =15V.

handbook, halfpage

012

3456

MRC154

IDSS

(mA)

VGSoff (V)

Fig.3

Forward transfer admittance as a function

of gate-source cut-off voltage; typical

values.

VDS = 15 V; ID =1 µA.

handbook, halfpage

MRC156

2345

VGSoff (V)

Yfs

(mS)

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