BF623 datasheet(3/8 Pages) PHILIPS

3 / 8 page

1999 Apr 21

Philips Semiconductors

Product speciﬁcation

PNP high-voltage transistors

BF621; BF623

THERMAL CHARACTERISTICS

Note

1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm2.

For other mounting conditions, see

“Thermal considerations for SOT89 in the General Part of associated Handbook”.

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

100

K/W

Rth j-s

thermal resistance from junction to soldering point

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB = −200 V

−−10

IE = 0; VCB = −200 V; Tj = 150 °C

−−10

µA

IEBO

emitter cut-off current

IC = 0; VEB = −5V

−−50

hFE

DC current gain

IC = −25 mA; VCE = −20 V

−

VCEsat

collector-emitter saturation voltage

IC = −30 mA; IB = −5mA

−−800

Cre

feedback capacitance

IC =ic = 0; VCE = −30 V; f = 1 MHz

−

1.6

transition frequency

IC = −10 mA; VCE = −10 V; f = 100 MHz

−

MHz

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