BF821 datasheet(3/8 Pages) PHILIPS

3 / 8 page

1999 Apr 15

Philips Semiconductors

Product speciﬁcation

PNP high-voltage transistors

BF821; BF823

THERMAL CHARACTERISTICS

Note

1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

500

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB = −200 V

−−10

IE = 0; VCB = −200 V; Tj = 150 °C

−−10

µA

IEBO

emitter cut-off current

IC = 0; VEB = −5V

−−50

hFE

DC current gain

IC = −25 mA; VCE = −20 V

−

VCEsat

collector-emitter saturation voltage

IC = −30 mA; IB = −5mA

−−800

Cre

feedback capacitance

IC =ic = 0; VCB = −30 V; f = 1 MHz −

1.6

transition frequency

IC = −10 mA; VCE = −10 V;

f = 100 MHz

−

MHz

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