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BF824 Datasheet(PDF) 3 Page - NXP Semiconductors |
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BF824 Datasheet(HTML) 3 Page - NXP Semiconductors |
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3 / 8 page ![]() 1999 Apr 15 3 Philips Semiconductors Product specification PNP medium frequency transistor BF824 CHARACTERISTICS Tj =25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector cut-off current IE = 0; VCB = −30 V −−−50 nA IEBO emitter cut-off current IC = 0; VEB = −4V −−−100 nA hFE DC current gain IC = −1 mA; VCE = −10 V 25 45 − IC = −4 mA; VCE = −10 V 25 50 − VBE base-emitter voltage IC = −4 mA; VCE = −10 V −−−900 mV Cre feedback capacitance IC = 0; VCE = −10 V; f = 1 MHz −− 0.3 pF fT transition frequency VCE = −10 V; f = 100 MHz IC = −1 mA 250 350 − MHz IC = −4 mA 400 450 − MHz IC = −8 mA 390 440 − MHz |
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