REV1.0

2

M-27-3

N-Channel Enhancement Mode

Field Effect Transistor

P0470JD

TO-252

Halogen-Free & Lead-Free

NIKO-SEM

ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted)

PARAMETER

SYMBOL

TEST CONDITIONS

LIMITS

UNITS

MIN

TYP MAX

STATIC

Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0V, ID = 250A

700

V

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250A

2

3.3

4

Gate-Body Leakage

IGSS

VDS = 0V, VGS = ±30V

±100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = 700V, VGS = 0V

1

A

VDS = 560V, VGS = 0V, TJ = 100 ° C

10

Drain-Source On-State

Resistance

1

RDS(ON)

VGS = 10V, ID = 2A

1.4

1.63

Ω

Forward Transconductance

1

gfs

VDS = 15V, ID = 2A

2.9

S

DYNAMIC

Input Capacitance

Ciss

VGS = 0V, VDS = 100V, f = 250KHz

228

pF

Output Capacitance

Coss

22

Reverse Transfer Capacitance

Crss

4.5

Gate Resistance

Rg

VGS = 0V, VDS = 0V, f = 1MHz

21

Ω

Total Gate Charge

2

Qg

VDS =560V, VGS = 10V, ID = 2 A

9.8

nC

Gate-Source Charge

2

Qgs

1.4

Gate-Drain Charge

2

Qgd

5.1

Turn-On Delay Time

2

td(on)

VDD = 350V,

ID  2A, VGS = 10V, RGEN =25Ω

15

nS

Rise Time

2

tr

29

Turn-Off Delay Time

2

td(off)

44

Fall Time

2

tf

69

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)

Continuous Current

IS

4

A

Forward Voltage

1

VSD

IF = 4A , VGS = 0V

1.2

V

Reverse Recovery Time

trr

IF = 2A , dIF/dt= 100A/μs

191

nS

Reverse Recovery Charge

Qrr

1.1

uC

1Pulse test : Pulse Width

 300 sec, Duty Cycle  2％.

2Independent of operating temperature.