REV1.0

2

M-48-5

P-Channel Enhancement Mode

Field Effect Transistor

P5510ED

TO-252

Halogen-Free & Lead-Free

NIKO-SEM

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

PARAMETER

SYMBOL

TEST CONDITIONS

LIMITS

UNIT

MIN

TYP MAX

STATIC

Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0V, ID = -250A

-100

V

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = -250A

-1

-2

-3

Gate-Body Leakage

IGSS

VDS = 0V, VGS = ±25V

±100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = -100V, VGS = 0V

-1

A

VDS = -100V, VGS = 0V, TJ = 55 °C

-10

Drain-Source On-State

Resistance

1

RDS(ON)

VGS = -4.5V, ID = -10A

54

69

mΩ

VGS = -10V, ID = -15A

50

59

Forward Transconductance

1

gfs

VDS = -5V, ID = -15A

47

S

DYNAMIC

Input Capacitance

Ciss

VGS = 0V, VDS = -50V, f = 1MHz

3876

pF

Output Capacitance

Coss

157

Reverse Transfer Capacitance

Crss

109

Gate Resistance

Rg

VGS =0V, VDS = 0V, f = 1MHz

3

Ω

Total Gate Charge

2

Qg (VGS=-10V)

VDS = -50V , VGS = -10V,

ID = -15A

75

nC

Qg(VGS=-4.5V)

37

Gate-Source Charge

2

Qgs

12

Gate-Drain Charge

2

Qgd

16

Turn-On Delay Time

2

td(on)

VDS = -50V ,

ID  -15A, VGS = -10V, RGEN =6Ω

17

nS

Rise Time

2

tr

46

Turn-Off Delay Time

2

td(off)

112

Fall Time

2

tf

90

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)

Continuous Current

IS

-27

A

Forward Voltage

1

VSD

IF = -15A, VGS = 0V

-1.2

V

Reverse Recovery Time

trr

IF = -15A, dlF/dt = 100A / S

45

nS

Reverse Recovery Charge

Qrr

71

nC

1Pulse test : Pulse Width

 300 sec, Duty Cycle  2%.

2Independent of operating temperature.