P-Channel Logic Level Enhancement Mode

Field Effect Transistor

REV 1.0

2

L-49-5

PE533BA

PDFN 3x3P

Halogen-free & Lead-Free

NIKO-SEM

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

TYPICAL

MAXIMUM

UNITS

Junction-to-Ambient

2

t ≦10s

RJA

40

°C / W

Junction-to-Ambient

2

Steady-State

RJA

62

Junction-to-Case

Steady-State

RJC

3

1Pulse width limited by maximum junction temperature.

2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air

environment with TA =25°C.

3The Power dissipation is based on R

JA t ≦10s value.

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

PARAMETER

SYMBOL

TEST CONDITIONS

LIMITS

UNIT

MIN

TYP MAX

STATIC

Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0V, ID = -250A

-40

V

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = -250A

-1

-1.8

-3

Gate-Body Leakage

IGSS

VDS = 0V, VGS = ±25V

±100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = -40V, VGS = 0V

-1

A

VDS = -40V, VGS = 0V, TJ = 55 °C

-10

Drain-Source On-State Resistance

1

RDS(ON)

VGS = -10V, ID = -11A

10

14

mΩ

VGS = -4.5V, ID = -11A

14

20

Forward Transconductance

1

gfs

VDS = -5V, ID = -11A

55

S

DYNAMIC

Input Capacitance

Ciss

VGS = 0V, VDS = -20V, f = 1MHz

2504

pF

Output Capacitance

Coss

317

Reverse Transfer Capacitance

Crss

246

Gate Resistance

Rg

VGS = 0V, VDS = 0V, f = 1MHz

4.1

Ω

Total Gate Charge

2

Qg(VGS=-10V)

VDS = -20V , ID = -11A

52

nC

Qg(VGS=-4.5V)

27

Gate-Source Charge

2

Qgs

6.4

Gate-Drain Charge

2

Qgd

12