BF861C datasheet(4/12 Pages) PHILIPS

4 / 12 page

1997 Sep 04

Philips Semiconductors

Product speciﬁcation

N-channel junction FETs

BF861A; BF861B; BF861C

THERMAL CHARACTERISTICS

Note

1. Device mounted on an FR4 printed-circuit board.

CHARACTERISTICS

Tj =25 °C; VDS = 8 V; VGS = 0; unless otherwise specified.

SYMBOL

PARAMETER

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient; note 1

500

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

V(BR)GSS

gate-source breakdown voltage IG = −1 µA

−25

−−

VGSoff

gate-source cut-off voltage

ID =1 µA

BF861A

−0.2

−−1V

BF861B

−0.5

−−1.5

BF861C

−0.8

−−2V

VGSS

gate-source forward voltage

VDS = 0; IG =1mA

−−

IDSS

drain current

BF861A

−

6.5

BF861B

−

BF861C

−

IGSS

gate cut-off current

VGS = −20 V; VDS =0

−−−1nA

y

fs

forward transfer admittance

BF861A

−

BF861B

−

BF861C

−

gos

common source output

conductance

BF861A

−−

200

µS

BF861B

−−

250

µS

BF861C

−−

300

µS

Ciss

input capacitance

f = 1 MHz

−−

Crss

reverse transfer capacitance

f = 1 MHz

−

2.1

2.7

Vn/√B

equivalent input noise voltage

VGS = 0; f = 1 MHz

−

1.5

−

nV/

√Hz

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