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ZDC834ATA Datasheet(PDF) 2 Page - Zetex Semiconductors |
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ZDC834ATA Datasheet(HTML) 2 Page - Zetex Semiconductors |
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2 / 4 page ![]() ISSUE 3 - APRIL 2001 ZDC834A 2 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Forward Current (single diode) I F 200 mA Power Dissipation at T amb=25°C (a) Linear Derating Factor P D 330 3 mW mW/°C Operating and Storage Temperature Range T j:Tstg -55 to +150 °C THERMAL RESISTANCE PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a) RθJA 417 °C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions ELECTRICAL CHARACTERISTICS (at Tamb = 25°C ). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Reverse Breakdown Voltage V BR 25 V I R =10µA Reverse Leakage Current I R 0.2 20 nA V R = 20V Temperature Coefficient η 400 ppm/°C V R = 3V, f=1MHz Diode Capacitance C d 42.3 47 51.7 pF V R = 2V, f=1MHz Capacitance Ratio C d /Cd 5.0 6.5 V R = 2V/20V, f=1MHz Figure of Merit Q 200 V R = 3V, f=50MHz |
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